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| BFS 482 NPN Silicon RF Transistor * For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. * fT = 8GHz F = 1.2dB at 900MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 ... + 150 - 65 ... + 150 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS 81 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 275 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFS 482 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFS 482 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.3 0.12 0.65 - GHz pF 0.45 dB 1.2 1.9 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 MHz Power gain 1) Gms 19.5 - IC = 10 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma |S21e|2 15.5 10 13 - IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 10 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-16-1996 BFS 482 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 TS 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 RthJS K/W Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 \ -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-16-1996 BFS 482 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.50 pF 8.0 8V GHz Ccb 0.40 0.35 0.30 0.25 0.20 0.15 fT 6.0 5V 5.0 3V 2V 4.0 3.0 2.0 0.10 0.05 0.00 0 1.0 0.0 4 8 12 16 V 24 0 5 10 15 20 25 30 35 1V 0.7V VR mA IC 45 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 8V dB 10V 5V dB G 18 G 10 5V 3V 16 3V 14 2V 6 12 4 10 1V 2 0.7V 0 0 5 10 15 20 25 30 35 mA IC 45 0 5 10 15 20 25 30 35 mA IC 45 0.7V 1V 8 2V 8 6 Semiconductor Group 5 Dec-16-1996 BFS 482 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 22 VCE = Parameter, f = 900MHz 28 IC=10mA dB 0.9GHz dBm 8V G 18 IP3 24 5V 22 16 0.9GHz 20 3V 18 14 1.8GHz 12 1.8GHz 16 14 12 10 8 8 6 0 1 2 3 4 5 6 7 8 V 10 6 0 4 8 12 16 20 mA IC 28 1V 2V 10 V CE Power Gain Gma, Gms = f(f) VCE = Parameter 32 Power Gain |S21|2= f(f) VCE = Parameter 28 dB IC=10mA IC=10mA dB 24 G 24 S21 22 20 20 18 16 16 14 12 12 8V 8 1V 0.7V 10 8 6 4 2 0 0.0 8V 1V 0.7V 4 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 6 Dec-16-1996 |
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